Wide-bandgap (WBG) power devices such as silicon carbide (SiC) and gallium nitride (GaN) are key enablers for high efficiency, high power density power electronics. Compared to silicon devices, WBG technologies offer higher breakdown voltage, lower on resistance, higher switching frequency, and higher operating temperature capability. While these advantages enable smaller, lighter, and more efficient systems, they also introduce significant design risks.
Device characterization becomes challenging due to extreme current, voltage, temperature, and accuracy requirements. When designing with these devices the typical SPICE-based approaches fail to capture the nonlinear core physics, saturation effects, and hysteresis phenomena that fundamentally govern real transformer performance. Accurate simulation is critical to modern power converter design, yet magnetics remain one of the most difficult components to model with confidence.
This webinar series helps you to understand these challenges and addresses how to potentially address them. It covers an end-to-end workflow from device characterization, device modeling, and simulating the complete design with all its aspects before going to prototype.
- Characterization of Advanced & Wide Band Gap (WBG) Power Devices: How advanced integrated power device analyzers can accurately and efficiently characterize next‑generation wide bandgap power devices.
- Power Electronics Device Modeling: From Measurement to Confident Design: How measurement‑driven modeling enables a closed loop design flow for realistic system‑level simulation and first‑pass design success.
- Advanced Transformer Modeling for Power Converter Design: How physics‑based, schematic‑to‑EM magnetic modeling enables accurate, simulation‑ready transformer designs for first‑pass success in high‑performance power electronics.
Check more details on the sessions by clicking on their title above and register today below to save your spot.
