Power semiconductor devices are at the core of modern power electronics. They include silicon Power MOSFETs, IGBTs, and wide‑bandgap GaN devices. Accurate and validated device models are essential for first‑pass design success. They allow designers to predict static behavior, switching losses, transient stress, and EMI performance before building hardware.
The webinar also demonstrates how using measurement‑driven modeling tools, enables engineers to efficiently extract and validate compact or physics‑based device models from DC, CV, and dynamic measurements. It shows a closed‑loop design flow that combines measurement, modeling, and circuit simulation, and that enables realistic system‑level analysis under actual operating conditions.
